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| New Product SIR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.0028 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a 50 50 Qg (Typ.) 38 nC FEATURES * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg Tested * 100 % UIS Tested PowerPAK(R) SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm * Synchronous Rectification * Secondary Side DC/DC D G Bottom View Ordering Information: SIR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Temperature)d, e Symbol VDS VGS ID Limit 40 20 50a 50a 33b, c 26b, c 70 50a 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f t 10 s Steady State Maximum C/W Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?64727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 www.vishay.com 1 Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit New Product SIR414DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A Min. 40 Typ. Max. Unit V 43 -6 1.0 2.5 100 1 10 30 0.0023 0.0026 102 0.0028 0.0032 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 4750 VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 0.2 610 275 78 38 13 11 0.7 14 9 41 9 33 VDD = 20 V, RL = 2 ID 10 A, VGEN = 4.5 V, Rg = 1 22 42 13 1.4 25 18 65 18 42 35 65 25 ns 117 57 nC pF IS ISM VSD trr Qrr ta tb TC = 25 C 50 60 A V ns nC ns IS = 5 A 0.75 40 48 24 16 1.1 60 72 IF = 10 A, dI/dt = 100 A/s, TJ = 25 C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 New Product SIR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 70 VGS = 10 V thru 3 V 56 I D - Drain Current (A) 1.5 I D - Drain Current (A) 42 TC = 25 C 1.0 2.0 28 0.5 14 TC = 125 C TC = - 55 C 0.6 1.2 1.8 2.4 3.0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0030 6000 Transfer Characteristics Ciss R DS(on) - On-Resistance () VGS = 4.5 V 0.0025 VGS = 10 V 4500 C - Capacitance (pF) 3000 0.0020 1500 Coss 0.0015 0 10 20 30 40 50 60 0 0 Crss 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 20 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.7 2.0 ID = 20 A Capacitance VGS = 10 V (Normalized) 1.4 VGS = 4.5 V 1.1 2 0.8 0 0 15 30 45 60 75 90 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SIR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.012 R DS(on) - On-Resistance () I S - Source Current (A) 0.009 10 TJ = 150 C TJ = 25 C 1 0.006 TJ = 125 C 0.003 TJ = 25 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.1 200 On-Resistance vs. Gate-to-Source Voltage 1.7 Power (W) 160 VGS(th) (V) 120 1.3 ID = 250 A 80 0.9 40 0.5 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 100 s 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25 C Single Pulse 0.01 0.01 BVDSS Limited 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 New Product SIR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 150 120 I D - Drain Current (A) 90 60 Package Limited 30 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 100 2.5 80 2.0 Power (W) Power (W) 60 1.5 40 1.0 20 0.5 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 www.vishay.com 5 New Product SIR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64727. www.vishay.com 6 Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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